近年来一直专注于功率器件先进封装技术与可靠性方面的研究，为功率器件的优化设计、寿命评估以及可靠性评价提供科学依据和分析模型。截至2024年2月，在力学、微电子封装技术以及电力电子类权威期刊发表期刊论文40余篇，国际会议论文30余篇。出版译著2部。授权美国发明专利2项，授权国家发明专利、软件著作权10余项。
代表性SCI期刊论文：
[1]AN Tong*, LIZezheng, ZHANG Yakun,QIN Fei, WANG Liang, LIN Zhongkang, TANG Xinling, DAI Yanwei, GONG Yanpeng, CHEN Pei. The effect of the surface roughness characteristics of the contact interface on the thermal contact resistance of the PP-IGBT module.IEEE Transactions on Power Electronics. Jun. 2022, 37(6): 7286-7298. (中科院一区TOP，JCR分区Q1)
[2]ZHAO Jingyi,AN Tong*, FANG Chao, BIE Xiaorui, QIN Fei*, CHEN Pei, DAI Yanwei. A study on the effect of microstructure evolution of the aluminum metallization layer on its electrical performance during power cycling.IEEE Transactions on Power Electronics, Nov. 2019, 34(11): 11036-11045. (中科院一区TOP，JCR分区Q1)
[3]QIN Fei, BIE Xiaorui,AN Tong*, Jingru Dai, DAI Yanwei, CHEN Pei. A lifetime prediction method for IGBT modules considering the self-accelerating effect of bond wire damage.IEEE Journal of Emerging and Selected Topics in Power Electronics, Apr. 2021, 9(2): 2271-2284. (JCR分区Q1)
[4]AN Tong*, ZHENG Xueheng,QIN Fei,DAI Yanwei, GONG Yanpeng, CHEN Pei. Macro-mesoscale modeling of the evolution of the surface roughness of the Al metallization layer of an IGBT module during power cycling.Materials. Mar. 2023, 16(5): 1936. (JCR分区Q2)
[5]AN Tong*, ZHOU Rui,QIN Fei*, CHEN Pei,DAI Yanwei, GONG Yanpeng. Computational modeling of intergranular crack propagation in an intermetallic compound layer.CMES-Computer Modeling in Engineering & Sciences. 2023, 135(2): 1481-1502.(JCR分区Q2)
[6]AN Tong*, QIN Fei, CHEN Si, CHEN Pei. The effect of the diffusion creep behavior on the TSV-Cu protrusion morphology during annealing.Journal of Materials Science: Materials in Electronics, Oct. 2018, 29(19): 16305-16316. (JCR分区Q2)
